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| DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. It is intended for use in wideband aerial amplifiers using SMD technology. PINNING PIN Code: E6 1 2 3 4 collector base emitter emitter 1 Top view BFG17A DESCRIPTION handbook, 2 columns 4 3 2 MSB014 Fig.1 SOT143. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT Cre GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency feedback capacitance maximum unilateral power gain noise figure up to Ts = 85 C; note 1 IC = 25 mA; VCE = 1 V; Tamb = 25 C IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 0; VCE = 5 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 C; ZS = 60 ; bs = opt. open base CONDITIONS open emitter MIN. - - - - 20 - - - - TYP. - - - - - 2.8 0.4 15 2.5 MAX. 25 15 50 300 150 - - - - GHz pF dB dB UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 85 C; note 1 open emitter open base open collector CONDITIONS MIN. - - - - - -65 - MAX. 25 15 2.5 50 300 +150 175 UNIT V V V mA mW C C 1995 Sep 12 2 Philips Semiconductors Product specification NPN 3 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM F Vo Notes PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain (note 1) noise figure output voltage CONDITIONS IE = 0; VCB = 10 V IC = 25 mA; VCE = 1 V; Tamb = 25 C IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IE = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 C IC = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 5 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 C; ZS = 60 ; bs = opt. note 2 MIN. - 20 - - - - - - - TYP. - 75 2.8 0.7 1.25 0.4 15 2.5 150 PARAMETER CONDITIONS BFG17A VALUE 290 UNIT K/W thermal resistance from junction up to Ts = 85 C; note 1 to soldering point MAX. 50 150 - - - - - - - UNIT nA GHz pF pF pF dB dB mV s 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------ dB. . ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. dim = -60 dB (DIN 45004B, para. 6,3: 3-tone); IC = 14 mA; VCE = 10 V; ZL = 75 . Vp = Vo; fp = 795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 1995 Sep 12 3 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A handbook, full pagewidth 1.5 nF 1.5 nF VBB 10 k L2 L3 1 nF 1 nF L1 1 nF 270 DUT 75 output VCC 75 input 3.3 pF 18 0.68 pF MBB251 (1) (2) L1 = L3 = 5 H Ferroxcube choke. L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm. Fig.2 Intermodulation distortion and second order intermodulation distortion MATV test circuit. handbook, halfpage 120 MBB374 MBB370 handbook, halfpage 1.2 h FE Cc (pF) 0.8 80 40 0.4 0 0 10 20 I C (mA) 30 0 0 4 8 12 V CB (V) 16 VCE = 1 V; Tamb = 25 C. IE = 0; f = 1 MHz; Tamb = 25 C Fig.3 DC current gain as function of collector current. Fig.4 Collector capacitance as a function of collector-base voltage. 1995 Sep 12 4 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A MBB373 MBB371 handbook, halfpage 4 handbook, halfpage 40 G UM (dB) fT (GHz) 30 3 20 10 2 0 10 20 I C (mA) 30 0 102 10 3 f (MHz) 104 VCE = 5 V; f = 500 MHz; Tamb = 25 C. IC = 15 mA; VCE = 10 V; Tamb = 25 C. Fig.5 Transition frequency as a function of collector current. Fig.6 Maximum unilateral power gain as a function of frequency. MBB372 handbook, halfpage 5 F (dB) 4 3 2 1 0 0 4 8 12 16 20 I C (mA) VCE = 5 V; f = 800 MHz; Tamb = 25 C; ZS = 60 ; bs = opt. Fig.7 Minimum noise figure as a function of collector current. 1995 Sep 12 5 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A 1 handbook, full pagewidth 0.5 2 0.2 2000 MHz +j 0 -j 0.2 1200 1000 500 40 MHz 0.2 200 100 0.5 1 IC = 15 mA; VCE = 10 V;Tamb = 25 C; Zo = 50 . 2 5 10 1500 0.5 800 1 2 5 10 10 5 MBB375 Fig.8 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 120 o 60 o 150 o 100 40 MHz 200 500 800 50 180 o 30 10 2000 MHz 30 o 0o 150 o 30 o 120 o 90 o IC = 15 mA; VCE = 10 V;Tamb = 25 C. 60 o MBB378 Fig.9 Common emitter forward transmission coefficient (S21). 1995 Sep 12 6 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 -j 0.2 0.5 1 2 5 10 40 MHz 10 5 0.2 500 200 800 1500 1000 100 1200 2000 MHz 0.5 1 IC = 15 mA; VCE = 10 V;Tamb = 25 C. 2 MBB376 Fig.10 Common emitter reverse transmission coefficient (S12). 90 o handbook, full pagewidth 2000 MHz 60 o 1500 1200 120 o 150 o 1000 800 500 200 100 40 MHz 30 o 180 o 1.0 0.6 0.2 0o 150 o 30 o 120 o 90 o IC = 15 mA; VCE = 10 V;Tamb = 25 C; Zo = 50 . 60 o MBB377 Fig.11 Common emitter output reflection coefficient (S22). 1995 Sep 12 7 Philips Semiconductors Product specification NPN 3 GHz wideband transistor PACKAGE OUTLINE BFG17A handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.12 SOT143. 1995 Sep 12 8 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BFG17A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 9 |
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